The 2006 ESSDERC Conference will allow only electronic submission of the papers in PDF format. Prospective authors must submit their paper(s) via the conference website.

Papers must be submitted in the final format to be published in the Proceedings. They must not exceed four A4 pages with all illustrations and references included. The size of the PDF files submitted should not exceed 2 Mbytes. Manuscript guidelines (MS Word, LaTex and PDF) as well as instructions on how to submit electronically are available on the paper submission website.

All paper submissions must be received by Monday, 10 April 2006, 23h59 (GMT -0700)

For submitting your paper, please register as a new author and follow the instructions posted on the paper submission site.

Click here to access the on-line paper submission site.

After selection of papers, the authors will be informed of the decision of the Technical Program Committee by e-mail at the beginning of June 2006. At the same time, the complete program will be published on the internet.

The working language of the conference is English, which must also be used for all presentations and printed material.


TRACK DESCRIPTIONS
Please note that on the paper submission site, all ESSCIRC and ESSDERC tracks are listed under a single pull-down menu. Please make sure to review the track descriptions below carefully and make your selection accordingly.


Advanced Devices
CMOS and bipolar devices covering device physics; novel MOS device structures (multiple gate, vertical, 3-D integrated FET, ballistic); circuit and device co-optimization; ultimate CMOS scaling issues; high performance, low power, and analog/RF devices; SOI; SGOI; strained silicon and SiGe device; silicon and silicon germanium bipolar transistors; high speed Si devices;

IC Manufacturing
Advances in integrated circuits technology; advanced/novel memory process integration; logic and mixed-mode IC manufacturing; processes for performance; high-speed logic; multifunction integrated circuits; integrated passives; low power, low noise, analog, RF and mixed signal ICs; IC manufacturing technology and methodology; process control, failure analysis and related modeling; front-end and back-end process modules for fabrication of CMOS, memory, and BICMOS devices.

Telecommunication, High Voltage and Power Devices
RF CMOS; passives; antennas; HBT; Bipolar; BiCMOS; high-voltage, high power devices; high temperature operation; SiC devices; MOS controlled power devices (e.g. DMOS, IGBT); smart power devices and ICs; IC cooling; devices for optical communications; optical links and interconnects; compound semiconductors (GaAs, InP, GaN, SiC, alloys) and optoelectronic device applications.

Modeling and Simulation
Numerical and analytical modeling of solid-state electronic and optoelectronic devices; physical and compact circuit models for devices and interconnects; numerical simulation and modeling of fabrication processes; electro-thermal modeling and simulation.

Characterization and Reliability
New device characterization methods; parameter extraction; test structures and methodologies; noise; charge-pumping; gate dielectric and device reliability; reliability of advanced interconnects and electromigration; reliability issues for new materials and devices (reliability of high-k and low-k materials); hot carriers; NBTI; defect control; equipment issues; monitoring; metrology; impact of back-end processing on devices; ESD; EMI.

Memory and System-on-Chip technologies
Embedded and stand-alone memories; nonvolatile; DRAM; FeRAM; MRAM; phase change and nano-crystal memories; single and few electron memories; above-IC integration of various detectors, sensors and actuators; devices and their integration for imaging; CMOS imagers; CCD's; TFT's; organic, amorphous, and polycrystalline devices; vacuum microelectronics; bonding techniques; IC cooling, packaging issues.

Sensors, MEMS, Flexible Electronics and Bio-Electronics
Detectors, sensors and micro electromechanical (MEM) devices; resonators (MEMS, FBAR, new architectures); MEMS switches and passives for RF applications; integrated sensors; micro-optical devices; micro-fluidic devices; energy scavenging devices and micro-power generators; design, fabrication, modeling, reliability and packaging of all sensors and MEMS categories; organic electronics; flexible substrate electronics; devices and technologies for lab-on-chip; bio-sensors for chemical, molecular and biological applications; bio-electronic circuits and applications.

Emerging Devices, Nanotechnology, Nanophotonics, Quantum and Spin Electronics
New nanoelectronic devices including nanotubes and nanowires (CNTs, semiconductor, metallic and DNA-templated nanowires), quantum dots and molecular devices; single electronics (SET, SEM and hybrids); nanotechnology and nanomaterials; advanced characterization of nanoelectronic devices and nanomaterials; new integrated functionality and emerging circuit architectures in nanoelectronics, photonic band-gap structures and crystals, molecular, nano-scale optoelectronics, optical and wireless on-chip ultra-scaled interconnects; new non-charge-based devices; spintronic devices and circuit applications.


Joint ESSDERC/ESSCIRC Track:

Emerging Nano-devices and Circuits
New integrated functionality in circuits and applications using non-classical MOSFET and/or nanowires, nanotubes, quantum and spin devices. Includes topics from ESSDERC tracks Advanced Devices and Emerging Devices and Nanotechnology in their circuit design context.